High Speed Devices & Circuit

High Speed Devices & Circuit training provided by university of NPTEL and Indian Institute of Technology Madras

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Created by IIT Madras Staff Last updated Sun, 27-Feb-2022 English


High Speed Devices & Circuit free videos and free material uploaded by Indian Institute of Technology, chennai (IIT chennai). This session contains about High Speed Devices & Circuit Updated syllabus , Lecture notes , videos , MCQ , Privious Question papers and Toppers Training Provided Training of this course. If Material not uploaded check another subject

Syllabus / What will i learn?

Lecture 1 - Introduction to Basic Concepts.

Lecture 2-Requirements of High Speed Devices, Circuits & Mat.
Lecture-3-Classifications & Properties of Compound Semicond.
Lecture4-Temary Compound Semiconductor and their Application.
Lecture5-Temary Compound Semiconductor and their Appl - 2.
Lecture 6 - Crystal Structures in GaAs.
Lecture 7 - Dopants and impurities in GaAs and InP.
Lecture 8- Brief Overview of GaAs Technology for High Speed.
Lecture 9 - Epitaxial Techniques for GaAs High Speed Devices.
Lecture 10 - MBE and LPE for GaAs Epitaxy.
Lecture 11 - GaAs and InP Devices for Microelectronics.
Lecture 12 - Metal Semiconductor contacts for MESFET.
Lecture13- Metal Semiconductor contacts for MESFET (Contd.).
Lecture14- Metal Semiconductor contacts for MESFET (Contd.).
Lecture 15 - Ohmic Contacts on Semiconductors.
Lecture 16 - Fermi Level Pinning & Schottky Barrier Diodes.
Lecture 17 - Schottky Barrier Diode.
Lecture 18 - Schottky Barrier Diodes.
Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes.
Lecture 20 - MESFET Operation & I-V Characteristics.
Lecture 21 - MESFET I-V Characteristics Shockley's Model.
Lecture 22 - MESFET Shockley's Model and Velocity saturation.
Lecture 23- MESFET Velocity Saturation effect.
Lecture 24 -MESFET Drain Current Saturation.
Lecture 25 - MESFET : Effects of channel length and gate length on IDS and gm.
Lecture 26 - MESFET: Effects of Velocity Saturation.
Lecture 27 - Velocity Field Characteristics.
Lecture-28-MESFET-SAINT.
Lecture-29-SELF Aligned MESFET-SAINT.
Lecture-30-Hetero Junctions.
Lecture-31-Hetero Junctions&HEMT.
Lecture-32-Hetero Junctions&HEMT(Contd).
Lecture-33-High Electron Mobility Transistor.
Lecture-34-HEMT-off Voltage.
Lecture-35-HEMT 1-V Characteristics and Transconductance.
Lecture-36-Indium Phosphide Based HEMT.
Lecture-37-Pseudomorphic HEMT.
Lecture-38-Hetrojunction Bipolar Transistors(HBT).
Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd).
Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd).Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd).



Curriculum for this course
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Description

This course discusses topics: important parameters governing the high-speed performance of devices and circuits; silicon-based MOSFET and BJT circuits for high-speed operation and their limitations; materials for high-speed devices and circuits; metal-semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal Semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high-speed Circuits; and high-frequency resonant-tunneling devices.

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